Lanthanum aluminum oxide, , single crystal substrate, <100>, >=99.99% trace metals basis

Code: 634735-1EA D2-231

Features and Benefits

Single crystal lanthanum aluminate substrate lattices have a good lattice match with most perovskite-structured materials. It is an excellent substrate ...


read more

Your Price
£202.00 EACH
£242.40 inc. VAT

Features and Benefits

Single crystal lanthanum aluminate substrate lattices have a good lattice match with most perovskite-structured materials. It is an excellent substrate for the epitaxial growth of magnetic and ferro-electric thin films and high-temperature superconductors. Due to its dielectric properties it is also posses properties for low-loss microwave and dielectric resonance applications.

Other Notes

thermal expansion = 10 × 10-6/°C; loss tangent at 10 GHz = ~3 × 10-4 @ 300 K, 0.6 × 10-4 @ 77 K; insoluble in mineral acids at 25 °C, soluble in H3PO3 at >150 °C

Packaging

1 ea in rigid mailer

Physical form

Rhombohedral at 25 °C (a = 5.357 Å, c = 13.22 Å); Cubic at >435 °C (a = 3.821 Å)

assay≥99.99% trace metals basis
density6.52 g/mL at 25 °C (lit.)
descriptionsingle side polished
dielectric constant~25
InChI keyKJXBRHIPHIVJCS-UHFFFAOYSA-N
InChI1S/Al.La.3O
mp2080 °C (lit.)
Quality Level100
reaction suitabilityreagent type: catalystcore: lanthanum
semiconductor properties﹤100﹥
size10 mm × 10 mm × 0.5 mm
SMILES stringO=[Al]O[La]=O
Cas Number12003-65-5
This product has met the following criteria: