Application

Etchant solution for precise, clean etching of tantalum, tantalum nitride, and tantalum oxide thin films and resists in electronics applications

Features and Benefits

Etch rate 70-80 Å / sec @ 25 C. Use with gold positive or negative photoresist. Rinse with Deionized water.

General description

Tantalum nitride etchant is a high purity etchant systems for precise, clean etching of tantalum, tantalum nitride, and tantalum oxide thin films and resists in electronics applications.

Packaging

500 mL in PFA/FEP bottle

Preparation Note

Etch times vary depending on material type (Ta, TaN, or Ta₂O₅) and purity. Dilute with water or lower the temperature to achieve a lower etch rate. Adding 1 part water to 2 parts etchant or reducing the temperature 10 °C will approximately reduce the etch rate by 50%. Parts to be etched should be placed in etchant solution with mild to moderate mechanical agitation. Tantalum Etchants contain hydrofluoric acid and will attack silicon oxides, titanium, nickel, aluminum, and chromium. Gold would be the ideal etch stop. You might also succeed with tungsten Rinse with Deionized water.