666610-25G Display Image

Tetrakis(dimethylamido)hafnium(IV), packaged for use in deposition systems

Code: 666610-25G D2-231

Application

Precursors Packaged for Depositions Systems

Used as precursor for atomic layer deposition of Hafnium Oxide nanolaminates, which are used as a reploacement f...


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£2,070.00 25G
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Application

Precursors Packaged for Depositions Systems

Used as precursor for atomic layer deposition of Hafnium Oxide nanolaminates, which are used as a reploacement for Silicon oxide in semiconductor devices.

General description

Alkyl amides of Hafnium provide a convenient and effective atomic layer deposition precursor to smooth and and amorphous hafnium oxide thin films.

Packaging

25 g in stainless steel cylinder

assay≥99.99% (trace metals analysis)
density1.098 g/mL at 25 °C
formlow-melting solid
InChI keyZYLGGWPMIDHSEZ-UHFFFAOYSA-N
InChI1S/4C2H6N.Hf/c4*1-3-2;/h4*1-2H3;/q4*-1;+4
mp26-29 °C (lit.)
Quality Level100
reaction suitabilitycore: hafnium
SMILES stringCN(C)[Hf](N(C)C)(N(C)C)N(C)C
Cas Number19782-68-4
Hazard Class4.3
Un Number3396
Pack Group2
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