Silicon, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. x thickness 3 in. x 0.5 mm

Code: 647764-1EA D2-231

Packaging

1 ea in rigid mailer

Physical properties

Oxygen content: ﹤= 1~1.8 x 10¹⁸/cm³; Carbon content: ﹤= 5...

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£196.00 EACH

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Packaging

1 ea in rigid mailer

Physical properties

Oxygen content: ﹤= 1~1.8 x 10¹⁸/cm³; Carbon content: ﹤= 5 x 10¹⁶/cm³; Boule diameter: 1~8 ″

0 vortex defects. Etch pitch density (EPD) ﹤ 100 (cm^-2). Resistivity 10^-3- 40Ω cm

bp	2355 °C (lit.)
contains	boron as dopant
density	2.33 g/mL at 25 °C (lit.)
diam. × thickness	3 in. × 0.5 mm
form	wafer (single side polished), crystalline (cubic (a = 5.4037))
InChI key	XUIMIQQOPSSXEZ-UHFFFAOYSA-N
InChI	1S/Si
mp	1410 °C (lit.)
Quality Level	100
semiconductor properties	﹤100﹥, P-type
SMILES string	[Si]

Cas Number

7440-21-3

This product has met the following criteria:

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